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IRF730AS, SiHF730AS, IRF730AL, SiHF730AL
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
(PCB Mounted, steady-state) a
Maximum Junction-to-Case (Drain)
SYMBOL
R thJA
R thJC
TYP.
-
-
MAX.
40
1.7
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V DS
? V DS /T J
V GS(th)
I GSS
I DSS
V GS = 0, I D = 250 μA
Reference to 25 °C, I D = 1 mA d
V DS = V GS , I D = 250 μA
V GS = ± 30 V
V DS = 400 V, V GS = 0 V
V DS = 320 V, V GS = 0 V, T J = 125 °C
400
-
2.0
-
-
-
-
0.5
-
-
-
-
-
-
4.5
± 100
25
250
V
V/°C
V
nA
μA
Drain-Source On-State Resistance
R DS(on)
V GS = 10 V
I D = 3.3 A b
-
-
1.0
?
Forward Transconductance
g fs
V DS = 50 V, I D = 3.3 A d
3.1
-
-
S
Dynamic
Input Capacitance
C iss
V GS = 0 V,
-
600
-
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 25 V,
f = 1.0 MHz, see fig. 5 d
-
-
103
4.0
-
-
pF
Output Capacitance
Effective Output Capacitance
Total Gate Charge
C oss
C oss eff.
Q g
V GS = 0 V
V DS = 1.0 V, f = 1.0 MHz
V DS = 320 V, f = 1.0 MHz
V DS = 0 V to 320 V c, d
-
-
-
-
890
30
45
-
-
-
-
22
Gate-Source Charge
Q gs
V GS = 10 V
I D = 3.5 A, V DS = 320 V,
see fig. 6 and 13 b, d
-
-
5.8
nC
Gate-Drain Charge
Turn-On Delay Time
Q gd
t d(on)
-
-
-
10
9.3
-
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 200 V, I D = 3.5 A,
R g = 12 ? , R D = 57 ? , see fig. 10 b, d
-
-
-
22
20
16
-
-
-
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current a
I S
I SM
MOSFET symbol
showing the
integral reverse
p - n junction diode
G
D
S
-
-
-
-
5.5
22
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V SD
t rr
Q rr
T J = 25 °C, I S = 5.5 A, V GS = 0 V b
T J = 25 °C, I F = 3.5 A, dI/dt = 100 A/μs b, d
-
-
-
-
370
1.6
1.6
550
2.4
V
ns
μC
Forward Turn-On Time
t on
Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D )
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ? 300 μs; duty cycle ? 2 %.
c. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 % to 80 % V DS .
d. Uses IRF730A, SiHF730A data and test conditions.
www.vishay.com
2
Document Number: 91046
S11-1048-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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